照明级大功率led技术HighpowerLEDtechnologyforlightingstage.docx
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照明级大功率led技术HighpowerLEDtechnologyforlightingstage.docx
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照明级大功率led技术HighpowerLEDtechnologyforlightingstage
照明级大功率led技术(HighpowerLEDtechnologyforlighting
stage)
Lightingclasshigh-powerLEDtechnology,.Txtchildhoodfeelfatherisnotsimple,andlaterfeelthatheisnotsimple,andlaterfeltthathischildisnotsimple.Themoreyouwanttoknowwhetheryouhaveforgottensomething,thebetteryouremember.ThisarticleiscontributedbyRichard_chan86
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March2006lampandlighting30volumefirst
Lightsourceresearch
HighpowerLEDtechnologyforlightingstage
PeiHongShen
(HuadongElectronicsGroupCo.,Ltd.,Nanjing210028)
Abstract:
ThispaperintroducesthedesignandtechnologyofhighpowerLEDlighting,thekeyisthechipandpackage,thenewcrystallinetwo-dimensionalphotonicstructuregreatlyimprovestheluminousefficiency,oneofthenewtechnologyforhighpowerLEDlighting.Keywords:
packagingtechnology;two-dimensionalphotoniccrystalstructure0Preface
Themajorlightinganddisplayprogramsfrom2004to2005areavailable
InsteadofsmallpowerLEDdevicesbecomemainstream,semiconductorlightingdevicesareinevitable.However,theencapsulationmethodsandpackagingmaterialsofconventionallow-powerLEDdevicescannotbeeasilyappliedtothepackagingmethodsofhigh-powerLEDdevices.Largepowerdissipation,largeheatingcapacityandhighluminousefficiencybringnewandhigherrequirementstoourpackagingprocess,packagingequipmentandpackagingmaterials.
FoundthatLEDasanapplicationlightsourceofelectronicproductshavebeenextendedtoLCD,TVbacklightmodule,headlights,projectorsandauxiliarylandscapinglightsource,etc.
Application.Withtheincreaseofluminousefficiency,productlifeandapplicationmode,thedemandforpowerLEDwithhighbrightnessandhighefficiencyhasshownagreatincrease.FromLED1970to2003morethanthirtyyearsofdevelopmentprocesscanbeseen,LEDluminousfluxwillincreaseabout2.2timesevery16~20months.Itisexpectedthatwithinfiveyears,thelightefficiencyoflightinggradehigh-powerLEDdeviceswillreach100lm/Wwillbepossible.Lightingstagehighpower
TheimprovementofthelightefficiencyofLEDdevicesdependsontheimprovementoftheopticalefficiencyofthechip1powerLEDchipInordertoobtainhigh-powerLEDdevices,asuitablehighpowerLEDchipmustbefabricated.Theusualmanufacturingmethodsintheworldareasfollows.
1.1flipchip
Synchronizationwithimprovedlightdissipationtechnologyispossible.Asweallknow,theexternalquantumefficiencyofLEDdependsontheinternalquantumefficiencyoftheepitaxialmaterialandtheopticalefficiencyofthechip.Atpresent,theepitaxialmaterialwithhighpowerLEDforthegrowthoftechnologyandmultiquantumwellstructureMOCVDextension,althoughtheinternalquantumefficiencyisnotthehighest,thereisroomforfurtherimprovement,butwefoundthatgain
ThebiggestbarriertohighlightfluxinLEDdevicesremainsthechipremoval
ThedesignofhighpowerLEDpackageshouldbemainlyinthefollowingtwopoints:
oneisthedevelopmentofpackagingstructureandhighlighttakingefficiencyislow,thetwochip(shellthermalresistancevalue(Rjunctiontocase)).Inadditiontoimprovingthequantumefficiencyofthechipitself,thepackagingandstructuraltechnologyofthemonomershouldalsoundergobreakthroughstoensurethephotoelectricperformanceandreliabilityofthehighpowerLED.Atpresent,itisnecessarytobreakthroughthepackagingtechnology,technologyisheattransferandheatdissipationtechnology.
Mm5cylindertypeLEDpackagingstructure,thetraditionalthermalresistanceashighas250DEGWto300DEGW,highpowerchipifusingthetraditionalletter/form,willbebecausetheheatcausedthesurfacetemperaturerisingrapidlywiththeepoxyresinaroundthechipcarbidediscoloration,resultinginacceleratedmonomerlightattenuationandevenfailure.Becausethesuddenchangeofrapidthermalstresscausedbytemperatureunderopencircuit(OpenLoop)andfailure.Therefore,forhighpowerLEDchipswithlargeoperatingcurrent,thenovelpackagingstructurewithlowthermalresistance,goodthermaldissipationandlowmechanicalstressisahighpowertype
ThekeytechnologyofLEDpackage.Theconcretesolutionatthisstageis...
Designofpackagingstructurefortypeandhighluminousefficiency.Fromthepointofviewofpracticalapplication,high-powerLEDdeviceswithsimpleinstallationandrelativelysmallvolumewillreplaceconventionallow-powerLEDdevicesinmostlightingapplications.Thebenefitsareveryobvious,andthelightinglampsmadeofsmallpowerLEDhavetofocusmanyLEDlightenergytomeetthedesignrequirementsinordertomeettheneedsoflighting.Thedisadvantageisthatthecircuitisverycomplexandtheheatdissipationispoor.InordertobalancethecurrentandvoltagebetweentheLED,acomplexpowersupplycircuitmustbedesigned.Bycomparison,
Thepowerofthehigh-powerLEDmonomerismuchhigherthanthesumofseveralsmallpowerLED,thepowersupplylineisrelativelysimple,theradiatingstructureisperfect,andthephysicalpropertyisstable.So,high-powerLEDdevices42
Thelowinterfacethermalresistance,highthermalconductivitymaterials(Die,Attach)chipbondingadhesivein
thelowerchip(oppositedirectionlight)metalradiatingblockisconnectedwithhighthermalconductivity(HeatSlug),willbeissuedbythechipdirectly
March2006lampandlighting30volumefirst
Thehighheatistransmittedtotheoutermostpartofthepackage.Thecombinationofthechipandtheradiatingblockisacarriermadeupofabracket(Leadframe)andaplasticcomponent(Car2
(Encapsulation)thestructure.
Compatibilityisgood,easytouse,andthusbecomeanothermainstreamofAlGaInNLEDdevelopment.
Rier)accordingtodifferentprocessingmethods,onecanbeusedforsubsequentsealingoftheadhesivematerial,andthe
1.2siliconsubstrateflipchipmethod
2basicpackagestructure
2.1heatdissipation
First,alargesizeLEDchip(Flip,Chip,LED)suitableforeutecticweldingelectrodeswasprepared,andthecorrespondingsizesiliconwasalsoprepared
TherearetwomainproblemstobeconsideredinhighpowerLED
package:
heatdissipationandlightoutput.Learnedfromthecurrent,temperature,fluxdiagrams,heatdissipationiscrucialforhighpowerLED.Ifnotthecurrentheatgeneratedbythetimeout,keepthePNjunctiontemperatureiswithintheallowablerange,willnotbeabletoobtainastablelightoutputandmaintainthenormallifeofthedevice.Theheatconductivityoftheheatsinkmaterialisthebest,butthecostofthesilverconductivefinishigherthanthatofthecommon
radiator.Theheatconductivityofcopperisclosetothatofsilver,anditscostislowerthanthatofsilver.Althoughthethermalconductivityofaluminumislowerthanthatofcopper,ithasthelowestcomprehensivecostandisconducivetolarge-scalemanufacturing.Amoreappropriateapproachistoconnectthechippartbycopperorsilverbasedheatsink,andtheheatsinkareconnectedtoformaladdertypethermalstructureinthealuminumradiator,thehighthermalconductivityofcopperorsilverratewillchipheattransfertothehighaluminumradiator,aluminumradiatorthroughtheheatdissipated(byaircoolingorheatconductionwayout).
Theadvantagesofthisapproachare:
fullyconsidertheperformanceoftheradiator,priceratio,thedifferentcharacteristicsoftheradiatorcombinedtogethertoachieveefficientheatdissipation,andcostcontrolrationalization.Itisimportanttonotethatitisimportanttoconnectthecopperbasedheatsinktothematerialselectionbetweenthechips.ThecommonchipbondingmaterialusedintheLEDindustryissilverglue.However,theheatresistanceofsilverglueisextremelyhigh:
10~25W/(M.
(K)ifsilverglueisusedasaconnectingmaterial,itisartificialinthecore
Floor,andmetalconductivelayerforeutecticweldingleadsandconductivelayerinmaking(ultrasonicgoldwireballjoint),thenusetheeutecticweldingequipmentwillbeoflargesizeLEDchipandthesiliconplateareweldedtogether(thisstructureismorereasonable,whichhasconsideredtheproblemoflightintoheatQ
Title,thisisthecurrentmainstreamHighOutputPowerChip
LEDproductionmethods.
TheAlGaInNpowerflipchip(FCLED)structuredevelopedbyAmericanLumiLedscompanyin2001isasfollows:
first,theNiAulayerisusedforohmiccontactandbackreflection;thesecondstepisusingthemask
Atthetopoftheepitaxialwafer,PtypeGaN:
Mg,thedepositionthicknessisgreaterthan500A,thedieisselectedtoetchoutthePtypelayerandthemultiquantumwellactivelayer,exposingtheNtypelayer;andthethirdstepisdepositionandetchingtoformtheNtypeohmiccontactlayer,andthechipruler
Two
Inchis1*1mm,PtypeohmiccontactsquareNohmiccontactresistancetotheminimum;thefourthstep,themetalbumpflipchipbondinginAlGaInNwithESDprotectiondiodes(ESD)siliconcarrier.
1.3ceramicsubstrateflipchipmethod
Withacombinsertedintoit,sothatthecurrentexpansiondistancecanbeshortenedandexpanded
Firstly,theLEDwaferfactoryisusedtopreparethecommonequipment
ALEDchipwithalargeluminousareaandacorrespondingceramicbaseplateofthecrystalweldingelectrodestructurearemade,andaeutecticweldingconductivelayerandaleadoutguidearefabricatedonthechip
Afterusingtheeutecticlayer,weldingequipmentwillbeoflargesizeLEDchipandtheceramicplatearewe
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