Microscale current path distributions of Zn1xMgxOcoated SnO2 F transparent electrodes prepared by.docx
- 文档编号:2785895
- 上传时间:2023-05-04
- 格式:DOCX
- 页数:10
- 大小:21.09KB
Microscale current path distributions of Zn1xMgxOcoated SnO2 F transparent electrodes prepared by.docx
《Microscale current path distributions of Zn1xMgxOcoated SnO2 F transparent electrodes prepared by.docx》由会员分享,可在线阅读,更多相关《Microscale current path distributions of Zn1xMgxOcoated SnO2 F transparent electrodes prepared by.docx(10页珍藏版)》请在冰点文库上搜索。
MicroscalecurrentpathdistributionsofZn1xMgxOcoatedSnO2Ftransparentelectrodespreparedby
Micro-scalecurrentpathdistributionsofZn1-xMgxO-coatedSnO2Ftransparentelectrodespreparedbysol-gelandsputteringmeth
ContentslistsavailableatScienceDirectThinSolidFilmsjournalhomepage:
/locate/tsfMicro-scalecurrentpathdistributionsofZn1-xMgxO-coatedSnO2:
Ftransparentelectrodespreparedbysol-gelandsputteringmethodsinperovskitesolarcellsJakapanChantanaa,⁎,TeruakiHirayamaa,ChaoDingb,YuKawanoa,QingShenb,KenjiYoshinoc,ShuziHayased,TakashiMinemotoa,⁎aDepartmentofElectricalandElectronicEngineering,RitsumeikanUniversity,1-1-1Nojihigashi,Kusatsu,Shiga525-8577,JapanbFacutyofInformaticsandEngineering,TheUniversityofElectro-Communications,1-5-1Chofugaoka,ChofuTokyo182-8585,JapancDepartmentofElectricalandElectronicEngineering,MiyazakiUniversity,1-1GakuenKibanadai,Miyazaki889-2192,JapandFacutyofLifeScienceandSystemEngineering,KyushuInstituteofTechnology,2-4Hibikino,Wakamatsu-ku,Kitakyushu,Fukuoka808-0196,JapanARTICLEINFOKeywords:
PerovskitesolarcellsZincmagnesiumoxideBufferlayerSol-geldepositionSputteringdepositionMicro-scalecurrentpathAtomicforcemicroscopyABSTRACTMethylammoniumleadiodideperovskitesolarcellswithZn1-xMgxObuffers(hole-blockinglayers)werefabri-catedtooptimizeconductionbandoffset(CBO)ofbuffer/perovskiteabsorberinterface.TheZn1-xMgxOfilmswerepreparedbysol-gelandsputteringmethods.ItisdisclosedthattheZn1-xMgxObufferswithincreasing[Mg]/([Mg]+[Zn])from0(pureZnO)to0.15preparedbythesol-gelmethodleadtotheenhancementofconversionefficiency()from10.7to15.1%,attributedtotheimprovementoftheCBO.However,theZn1-xMgxObufferswithenhancing[Mg]/([Mg]+[Zn])from0to0.10depositedbythesputteringmethodyieldthedecreaseinfrom6.6to5.6%.Thelowerinthecaseofthesputteringmethodismainlycausedbythelowershort-circuitcurrentdensity(JSC).Accordingtomicro-scalecurrentpathdistributionsofZnO-coatedSnO2:
F(FTO)substrates,localcurrenteasilyflowsincaseofZnO-coatedFTOsamplebysol-gelmethod.Ontheotherhand,thelocalcurrenthardlyflowsespeciallyatpeakregionsofsamplesurfaceincaseofZnO-coatedFTOsamplebysputteringmethod.ThisisbecauseZnO(orZn1-xMgxOwith[Mg]/([Mg]+[Zn])of0)bysputteringhashigherresistancethanthatbysol-gelmethodandtendstobeformedonpeakregionsoftheFTOsurface.Consequently,thelowJSCoftheperovskitesolarcellswiththebufferbysputteringmethodisobserved.1.IntroductionSustainableenergyisoneofthemostinterestingenergiesforal-ternativestofossilfuelandnuclearenergies[1].Currently,wafer-basedsilicon(Si)solarcellsareplayinganimportantroleinthephotovoltaic(PV)market;however,theSiwafersarefabricatedfromtheexpensiveprocess,takingabouthalfofthecostoftheSisolarcells[1,2].Thin-filmsolarcellsareconsideredaslessexpensivealternativethanwafer-basedSisolarcells[1,2].Thinfilmsolarcellsbasedontheperovskiteastheabsorberhaveattractedsignificantattentionowingtolow-costandhighefficiencyorganic-inorganichybridsolarcells,wheretheper-ovskiteisamaterialwiththeformulaABX3[310].TheXisananionandAandBarecations,whereAhaslargersizethanB[310].Since2009,theconversionefficiency()oftheperovskitesolarcellhasbeensignificantlyenhancedfrom3.8to22.7%[35,7,10,11].Theplanarheterojunctionstructureoftheperovskitesolarcelliscomposedoftransparentconductiveoxide(TCO)/buffer(hole-blockinglayer)/perovskiteabsorber/holetransportmaterial(HTM)/metalbackcontact[12,13].Thestructureoftheperovskitesolarcellissimilartothatofinorganicsolarcells,suchasCu(In,Ga)Se2(CIGS),wherethestructureofCIGSsolarcellisTCO/buffer/CIGSabsorber/metalbackcontact[1418].Ithasbeenreportedthatconductionbandoffset(CBO)ofthebuffer/CIGSabsorberinterfaceintheCIGSesolarcellswasthe-oreticallyandexperimentallydevelopedtoreducethecarrierre-combinationattheinterfaceforimproving[1921].Moreover,theeffectoftheCBOisexperimentallyconfirmedindifferentabsorbermaterialssuchasCuInS2[22]andSnS[23,24].IthasbeenrecentlyreportedthattheoreticalanalysisonimpactoftheCBOofthebuffer/binationandenhancingthe[25].TheeffectoftheCBOofthebuffer/perovskiteabsorberinterfaceintheperovskitesolarcellisin-terestinglyexaminedfortheimprovementofcellperformances.Theconductionbandminimum(EC)ofZn1-xMgxOcanbecontrolledandmovedtowardthevacuumlevelwithincreasingMgcontent(x),namelybandgapenergy(Eg),wherevalencebandmaximum(EV)isslightlychangedwhenxisinarangeof00.17[26,27].TheZn1-xMgxOma-terialshavebeenwidelyutilizedasthebufferlayersofsolarcells[28,29].Inthiswork,theZn1-xMgxOfilmswithdifferentMgcontentswereconsequentlyutilizedasthebuffer(hole-blockinglayer)inthemethy-lammoniumleadiodide(MAPbI3)perovskitesolarcellstoexperimen-tallyinvestigatetheimpactoftheCBOofthebuffer/perovskiteab-sorberinterfaceoncellperformances.TheZn1-xMgxOfilmswerefabricatedbysol-gel(spin-coating)andsputteringmethodsforacom-parison.Moreover,tounderstandtheflowofthecurrentthroughthebufferlayersdepositedbythesol-gelandsputteringmethods,themicro-scalecurrentpathdistributionsofthebufferlayerswereex-aminedusingconductiveatomicforcemicrocopy(C-AFM),providingameaningfulinterpretationtounderstandthestate-of-the-artandfutureimprovementofthecellperformances.2.ExperimentalmethodsPerovskitesolarcellswithaplanarheterojunctionstructureofF-dopedSnO2(FTO)/Zn1-xMgxObuffer/perovskiteabsorber/spiro-OMeTAD(HTM)/Aubackcontactwerefabricated,whereMgcontentoftheZn1-xMgxObuffer,expressedas[Mg]/([Mg]+[Zn]),wasvaried.Inthefabricationofthesolarcells,theFTOsubstrates(NipponSheetGlassCo.Ltd)astheTCOlayerwererinsedinultrasonicbathusingdeionizedwater,acetoneandmethanol.TheFTOsubstrateswerethentreatedbyUV/O3processabout5min.Zn1-xMgxOfilmswerenextdepositedontheFTOsubstratesbythesol-gelandsputteringmethods.Forthesol-gelmethod,Zn1-xMgxObufferswiththicknessinarangeof2655nmweredepositedontheFTOsubstrates[30].TheZn-Mgmixedsol-gelsolutionswerefirstpreparedbymixingzincsalt(Zn2+)andmagnesiumsalt(Mg2+)with0,5,10,15,and20%molarpercentagebasedonmetalions[31,32].Themixedsol-gelsolutionswerethenspin-coatedonthecleanedFTOsubstratesandthesampleswerefollowedbysinteringat290C.Forthesputteringmethod,Zn1-xMgxObufferswiththicknessinarangeof415nmwerefabricatedontheFTOsubstratesthroughtheco-sputteringofZnO(99.99%)andMgO(99.99%)targets.Thediameterofbothtargetsis76.2mm.Theback-groundpressurewas2.0104Pa,theworkingpressurewas0.1Pa,andtheArgasflowwasfixedat3.9sccm.Thesamplewaswater-cooledtomaintainasubstratetemperatureatroomtemperatureduringtheco-sputtering.TheshuttersforZnOandMgOtargetsweresimultaneouslyopened,andtheMgcontentswerecontrolledfrom0to0.16byvaryingthesputteringpowerappliedtoeachtargettocontrolthesputteringrateasdescribedpreviously[27],wheretheMgcontentwasexaminedbyenergy-dispersiveX-rayspectroscopy.TheZn1-xMgxOfilmsbythesol-gelandsputteringmethodsweremoreoverdepositedonsoda-limeglass(SLG)substrates.Theopticaltransmittanceandreflectancespectraofthefilmswerethenrecordedbyultraviolet/visiblenear-in-fraredspectrophotometer(UV-3600,Shimadzu).Theabsorptioncoef-ficient()oftheZn1-xMgxOfilmswascalculatedtomakethe(h)2plotsasafunctionofphotonenergy(h).TheEgvaluesofZn1-xMgxOfilmswereestimatedfromlinearlyextrapolatingthe(h)2toh(x-axis),wheretheh-interceptgivestheEg.Inaddition,thesurfaceFig.1.Cross-sectionalimageoftheresultingperovskitesolarcell.Fig.2.(a)Opticaltransmittancespectraand(b)theircorresponding(h)2plotsasafunctionofphotonenergy(h)forZn1-xMgxOfilmsonSLGsubstratespreparedbythesputteringmethodwith[Mg]/([Mg]+[Zn])ratiosof0(pureZnO)and0.10.J.Chantanaetal.ThinSolidFilms669(2019)455460456morphologyandmicro-scalecurrentpathdistributionswerein-vestigatedbyC-AFMsystem(AFM5300Escanningprobemicroscopy,HITACHI)ontheFTOsubstrateandtheZnO-coatedFTOsubstrates,whereZnOfilmsweredepositedbythesol-gelandsputteringmethods.AfterpreparingtheZn1-xMgxObuffersonFTOsubstrates,theMAPbI3perovskiteabsorberswithathicknessofabout510nmwerepreparedbytwo-stepsequentialdepositionprocess,wherethePbI2precursorwasfirstdepositedbyspincoatingonthesamplesandtheMAIsolutionwasthendroppedonthePbI2precursor,makingthePbI2reactedwithMAItoformMAPbI3perovskiteabsorbersasdescribedpreviously[33].Next,thespiroOMeTADfilmswithathicknessofap-proximately180nmasHTMwerespin-coatedusingspiro-OMeTADsolution[33].Finally,theAubackcontactswithathicknessof80nmweredepositedbythermalevaporationmethod.Thecross-sectionalimageoftheresultingperovskitesolarcellwasinvestigatedbyscanningelectronmicroscopyasshowninFig.1.Thecellperformancepara-meters,whichareshort-circuitcurrentdensity(JSC),open-circuitvol-tage(VOC),fillfactor(FF)and,oftheresultingperovskitesolarcellswithdifferentMgcon
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- Microscale current path distributions of Zn1xMgxOcoated SnO2 transparent electrodes prepared by
链接地址:https://www.bingdoc.com/p-2785895.html